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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDD10AN06A0_F085
Standard Package 2500
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1840pF @ 25V
FET Feature -
Power Dissipation (Max) 135W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IPN70R900P7SATMA1
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IRF530STRLPBF
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CSD16410Q5A
Texas Instruments, N-Channel 25V 16A (Ta), 59A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
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Nexperia USA Inc., N-Channel 40V 120A (Tc) 263W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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BUK761R7-40E,118
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IRFP250MPBF
Infineon Technologies, N-Channel 200V 30A (Tc) 214W (Tc) Through Hole TO-247AC, HEXFET®
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SSM3K329R,LF
Toshiba Semiconductor and Storage, N-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSIII
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