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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STH185N10F3-2
Standard Package 1000
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, STripFET™ F3
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 114.6nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6665pF @ 25V
FET Feature -
Power Dissipation (Max) 315W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package H2Pak-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SPP06N80C3XKSA1
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Microchip Technology, N-Channel 9V 330mA (Tj) 360mW (Ta) Surface Mount SOT-23-5,
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Vishay Siliconix, N-Channel 40V 54.8A (Ta), 219A (Tc) 6.25W (Ta), 100W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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IPP60R040C7XKSA1
Infineon Technologies, N-Channel 600V 50A (Tc) 227W (Tc) Through Hole PG-TO220-3-1, CoolMOS™ C7
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TSM026NA03CR RLG
Taiwan Semiconductor Corporation, N-Channel 30V 168A (Tc) 125W (Tc) Surface Mount 8-PDFN (5x6),
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ZVN2110ASTZ
Diodes Incorporated, N-Channel 100V 320mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible),
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SIHH120N60E-T1-GE3
Vishay Siliconix, N-Channel 600V 24A (Tc) 156W (Tc) Surface Mount PowerPAK® 8 x 8,
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STW26NM60N
STMicroelectronics, N-Channel 600V 20A (Tc) 140W (Tc) Through Hole TO-247-3, MDmesh™ II
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BUK9675-100A,118
Nexperia USA Inc., N-Channel 100V 23A (Tc) 99W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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SSM3K72CFS,LF
Toshiba Semiconductor and Storage, N-Channel 60V 170mA (Ta) 150mW (Ta) Surface Mount SSM, U-MOSVII-H
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SIHP100N60E-GE3
Vishay Siliconix, N-Channel 600V 30A (Tc) 208W (Tc) Through Hole TO-220AB,
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BSZ520N15NS3GATMA1
Infineon Technologies, N-Channel 150V 21A (Tc) 57W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™
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