Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2302DDS-T1-GE3

SI2302DDS-T1-GE3

SI2302DDS-T1-GE3

Part NumberSI2302DDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 20V SOT23

DatasheetSI2302DDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2302DDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2302DDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2302DDS-T1-GE3.
We are offering SI2302DDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2302DDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2302DDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.9A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.5nC @ 4.5V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	710mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2302DDS-T1-GE3 - Related Products

	STD25NF10T4	STMicroelectronics, N-Channel 100V 25A (Tc) 100W (Tc) Surface Mount DPAK, STripFET™ II	View
	NVB082N65S3F	ON Semiconductor, N-Channel 650V 40A (Tc) 313W (Tc) Surface Mount D2PAK-3 (TO-263),	View
	IXFH100N30X3	IXYS, N-Channel 300V 100A (Tc) 480W (Tc) Through Hole TO-247, HiPerFET™	View
	BSZ150N10LS3GATMA1	Infineon Technologies, N-Channel 100V 40A (Tc) 2.1W (Ta), 63W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	STW45N60DM6	STMicroelectronics, N-Channel 600V 30A (Tc) 210W (Tc) Through Hole TO-247, MDmesh™ DM6	View
	BSC13DN30NSFDATMA1	Infineon Technologies, N-Channel 300V 16A (Tc) 150W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	BUK9M23-80EX	Nexperia USA Inc., N-Channel 80V 37A (Tc) 79W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101, TrenchMOS™	View
	SQ2310ES-T1_GE3	Vishay Siliconix, N-Channel 20V 6A (Tc) 2W (Tc) Surface Mount TO-236, TrenchFET®	View
	HUF76639S3ST	ON Semiconductor, N-Channel 100V 51A (Tc) 180W (Tc) Surface Mount D²PAK (TO-263AB), UltraFET™	View
	FQP3N80C	ON Semiconductor, N-Channel 800V 3A (Tc) 107W (Tc) Through Hole TO-220-3, QFET®	View
	SI7846DP-T1-GE3	Vishay Siliconix, N-Channel 150V 4A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IRFS7434TRL7PP	Infineon Technologies, N-Channel 40V 240A (Tc) 245W (Tc) Surface Mount D2PAK-7, HEXFET®, StrongIRFET™	View

SI2302DDS-T1-GE3 - Tags

SI2302DDS-T1-GE3 SI2302DDS-T1-GE3 PDF SI2302DDS-T1-GE3 datasheet SI2302DDS-T1-GE3 specification SI2302DDS-T1-GE3 image SI2302DDS-T1-GE3 India Renesas Electronics India SI2302DDS-T1-GE3 buy SI2302DDS-T1-GE3 SI2302DDS-T1-GE3 price SI2302DDS-T1-GE3 distributor SI2302DDS-T1-GE3 supplier SI2302DDS-T1-GE3 wholesales