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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDD86367
Standard Package 1
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4840pF @ 40V
FET Feature -
Power Dissipation (Max) 227W (Tj)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
STP15N60M2-EP
STMicroelectronics, N-Channel 600V 11A (Tc) 110W (Tc) Through Hole TO-220, MDmesh™ M2-EP
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IRFZ14PBF
Vishay Siliconix, N-Channel 60V 10A (Tc) 43W (Tc) Through Hole TO-220AB,
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PHB191NQ06LT,118
Nexperia USA Inc., N-Channel 55V 75A (Tc) 300W (Tc) Surface Mount D2PAK, TrenchMOS™
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SI7772DP-T1-GE3
Vishay Siliconix, N-Channel 30V 35.6A (Tc) 3.9W (Ta), 29.8W (Tc) Surface Mount PowerPAK® SO-8, SkyFET®, TrenchFET®
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PCP1402-TD-H
ON Semiconductor, N-Channel 250V 1.2A (Ta) 3.5W (Tc) Surface Mount SOT-89/PCP-2,
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IXFP14N60P3
IXYS, N-Channel 600V 14A (Tc) 327W (Tc) Through Hole TO-220AB, HiPerFET™, Polar3™
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CSD19506KCS
Texas Instruments, N-Channel 80V 100A (Ta) 375W (Tc) Through Hole TO-220-3, NexFET™
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FDB86363-F085
ON Semiconductor, N-Channel 80V 110A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), Automotive, AEC-Q101, PowerTrench®
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FDU6N25
ON Semiconductor, N-Channel 250V 4.4A (Tc) 50W (Tc) Through Hole I-PAK, UniFET™
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ZVN3320FTA
Diodes Incorporated, N-Channel 200V 60mA (Ta) 330mW (Ta) Surface Mount SOT-23-3,
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BUK9Y72-80E,115
Nexperia USA Inc., N-Channel 80V 15A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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FCD5N60TM-WS
ON Semiconductor, N-Channel 600V 4.6A (Tc) 54W (Tc) Surface Mount D-Pak, SuperFET™
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