SI1302DL-T1-GE3
SI1302DL-T1-GE3
Part Number SI1302DL-T1-GE3 Description MOSFET N-CH 30V 600MA SC-70-3 Package / Case SC-70, SOT-323Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3
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SI1302DL-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI1302DL Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 480mOhm @ 600mA, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 10V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 280mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-70-3 Package / Case SC-70, SOT-323
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