IPB180N04S4H0ATMA1
IPB180N04S4H0ATMA1
Part Number IPB180N04S4H0ATMA1 Description MOSFET N-CH 40V 180A TO263-7-3 Package / Case TO-263-7, D²Pak (6 Leads + Tab)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 40V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3
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IPB180N04S4H0ATMA1 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB180N04S4-H0 Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 180µA Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 17940pF @ 25V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-7-3 Package / Case TO-263-7, D²Pak (6 Leads + Tab)
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IPB180N04S4H0ATMA1 - Tags
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