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RFP12N10L

RFP12N10L

Part NumberRFP12N10L

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 100V 12A TO-220AB

DatasheetRFP12N10L

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 12A (Tc) 60W (Tc) Through Hole TO-220-3

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RFP12N10L - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RFP12N10L
Standard Package	800
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	200mOhm @ 12A, 5V
Vgs(th) (Max) @ Id	2V @ 250µA
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 25V
FET Feature	-
Power Dissipation (Max)	60W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

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