SIHS90N65E-E3


SIHS90N65E-E3

Part NumberSIHS90N65E-E3

Manufacturer

Description

Datasheet

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SIHS90N65E-E3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package500
ManufacturerVishay Siliconix
Series-
PackagingTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C87A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs29mOhm @ 45A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs591nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds11826pF @ 100V
FET Feature-
Power Dissipation (Max)625W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageSUPER-247™ (TO-274AA)
Package / CaseTO-247-3

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SIHS90N65E-E3 - Tags

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