FDD5612
FDD5612
Part Number FDD5612
Description MOSFET N-CH 60V 5.4A DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Lead Time To be Confirmed
Detailed Description N-Channel 60V 5.4A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252-3
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FDD5612 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDD5612
Standard Package 1
Manufacturer ON Semiconductor
Series PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 55mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 30V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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