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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDD5810_F085
Standard Package 2500
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 7.4A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1890pF @ 25V
FET Feature -
Power Dissipation (Max) 72W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
FDMS86540
ON Semiconductor, N-Channel 60V 20A (Ta), 50A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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STD4N90K5
STMicroelectronics, N-Channel 900V 3A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™
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FDMS3672
ON Semiconductor, N-Channel 100V 7.4A (Ta), 22A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-MLP (5x6), Power56, UltraFET™
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IXTP80N10T
IXYS, N-Channel 100V 80A (Tc) 230W (Tc) Through Hole TO-220AB, TrenchMV™
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IRFH5250DTRPBF
Infineon Technologies, N-Channel 25V 40A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®
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IPD180N10N3GATMA1
Infineon Technologies, N-Channel 100V 43A (Tc) 71W (Tc) Surface Mount PG-TO252-3, OptiMOS™
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SIHG70N60EF-GE3
Vishay Siliconix, N-Channel 600V 70A (Tc) 520W (Tc) Through Hole TO-247AC,
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FQA140N10
ON Semiconductor, N-Channel 100V 140A (Tc) 375W (Tc) Through Hole TO-3PN, QFET®
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DMN53D0LW-7
Diodes Incorporated, N-Channel 50V 360mA (Ta) 320mW (Ta) Surface Mount SOT-323,
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IRLB8721PBF
Infineon Technologies, N-Channel 30V 62A (Tc) 65W (Tc) Through Hole TO-220AB, HEXFET®
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SIHB33N60E-GE3
Vishay Siliconix, N-Channel 600V 33A (Tc) 278W (Tc) Surface Mount D2PAK,
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SI2342DS-T1-GE3
Vishay Siliconix, N-Channel 8V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23, TrenchFET®
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