FDD86110
FDD86110
Part Number FDD86110
Description MOSFET N-CH 100V 12.5A DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Lead Time To be Confirmed
Detailed Description N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount D-PAK (TO-252)
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FDD86110 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDD86110
Standard Package 1
Manufacturer ON Semiconductor
Series PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 12.5A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 10.2mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2265pF @ 50V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 127W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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