FDD86367-F085

Part NumberFDD86367-F085

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDD86367_F085
Standard Package	2500
Manufacturer	ON Semiconductor
Series	Automotive, AEC-Q101, PowerTrench®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	88nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4840pF @ 40V
FET Feature	-
Power Dissipation (Max)	227W (Tj)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-PAK (TO-252)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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SI1480DH-T1-GE3	Vishay Siliconix, N-Channel 100V 2.6A (Tc) 1.5W (Ta), 2.8W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®	View
IPB036N12N3GATMA1	Infineon Technologies, N-Channel 120V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7, OptiMOS™	View
FK3506010L	Panasonic Electronic Components, N-Channel 60V 100mA (Ta) 150mW (Ta) Surface Mount SMini3-F2-B,	View
IPP65R310CFDXKSA1	Infineon Technologies, N-Channel 650V 11.4A (Tc) 104.2W (Tc) Through Hole PG-TO220-3, CoolMOS™	View
IPB100N12S305ATMA1	Infineon Technologies, N-Channel 120V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3, OptiMOS™	View
DMN4060SVT-7	Diodes Incorporated, N-Channel 45V 4.8A (Ta) 1.2W (Ta) Surface Mount TSOT-26,	View
STD11NM50N	STMicroelectronics, N-Channel 500V 8.5A (Tc) 70W (Tc) Surface Mount DPAK, MDmesh™ II	View
SIR622DP-T1-RE3	Vishay Siliconix, N-Channel 150V 12.6A (Ta), 51.6A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, ThunderFET®	View
2N7002BKM,315	Nexperia USA Inc., N-Channel 60V 450mA (Ta) 360mW (Ta) Surface Mount DFN1006-3, Automotive, AEC-Q101, TrenchMOS™	View
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TK8A10K3,S5Q	Toshiba Semiconductor and Storage, N-Channel 100V 8A (Ta) 18W (Tc) Through Hole TO-220SIS, U-MOSIV	View

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