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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9215-55A
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 2916pF @ 25V
FET Feature -
Power Dissipation (Max) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
ZXMN10A09KTC
Diodes Incorporated, N-Channel 100V 5A (Ta) 2.15W (Ta) Surface Mount TO-252-3,
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TSM60NB260CI C0G
Taiwan Semiconductor Corporation, N-Channel 600V 13A (Tc) 32.1W (Tc) Through Hole ITO-220AB,
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FDN8601
ON Semiconductor, N-Channel 100V 2.7A (Ta) 1.5W (Ta) Surface Mount SuperSOT-3, PowerTrench®
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RTL035N03TR
Rohm Semiconductor, N-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount TUMT6,
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IPN80R3K3P7ATMA1
Infineon Technologies, N-Channel 800V 1.9A (Tc) 6.1W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
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IXTP80N075L2
IXYS, N-Channel 75V 80A (Tc) 357W (Tc) Through Hole TO-220AB, Linear L2™
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SQD100N04-3M6L_GE3
Vishay Siliconix, N-Channel 40V 100A (Tc) 136W (Tc) Surface Mount TO-252AA,
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SIHB30N60AEL-GE3
Vishay Siliconix, N-Channel 600V 28A (Tc) 250W (Tc) Surface Mount TO-263 (D²Pak), EL
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FDB2710
ON Semiconductor, N-Channel 250V 50A (Tc) 260W (Tc) Surface Mount D²PAK, PowerTrench®
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FDMC86320
ON Semiconductor, N-Channel 80V 10.7A (Ta), 22A (Tc) 2.3W (Ta), 40W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®
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FDMS8333L
ON Semiconductor, N-Channel 40V 22A (Ta), 76A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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FDMS0308AS
ON Semiconductor, N-Channel 30V 24A (Ta), 49A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™
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