Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI3424BDV-T1-GE3

SI3424BDV-T1-GE3

SI3424BDV-T1-GE3

Part NumberSI3424BDV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 8A 6TSOP

DatasheetSI3424BDV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 8A (Tc) 2.1W (Ta), 2.98W (Tc) Surface Mount 6-TSOP

To learn about the specification of SI3424BDV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3424BDV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3424BDV-T1-GE3.
We are offering SI3424BDV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI3424BDV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI3424BDV
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.6nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	735pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 2.98W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

SI3424BDV-T1-GE3 - Related Products

	IRF8302MTRPBF	Infineon Technologies, N-Channel 30V 31A (Ta), 190A (Tc) 2.8W (Ta), 104W (Tc) Surface Mount DIRECTFET™ MX, HEXFET®	View
	FDT86102LZ	ON Semiconductor, N-Channel 100V 6.6A (Ta) 2.2W (Ta) Surface Mount SOT-223-4, PowerTrench®	View
	NTMFS5C673NLT1G	ON Semiconductor, N-Channel 60V 3.6W (Ta), 46W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	STH290N4F6-6AG	STMicroelectronics, N-Channel 40V 180A (Tc) 300W (Tc) Surface Mount H2PAK-6, Automotive, AEC-Q101, STripFET™	View
	MVGSF1N02LT1G	ON Semiconductor, N-Channel 20V 750mA (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236),	View
	ZXMN6A08KTC	Diodes Incorporated, N-Channel 60V 5.36A (Ta) 2.12W (Ta) Surface Mount TO-252-3,	View
	DMTH4004LK3Q-13	Diodes Incorporated, N-Channel 40V 100A (Tc) 3.9W (Ta), 180W (Tc) Surface Mount TO-252-4L, Automotive, AEC-Q101	View
	IRFS7537TRLPBF	Infineon Technologies, N-Channel 60V 173A (Tc) 230W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®, StrongIRFET™	View
	SIHG22N50D-GE3	Vishay Siliconix, N-Channel 500V 22A (Tc) 312W (Tc) Through Hole TO-247AC,	View
	FDMC8321L	ON Semiconductor, N-Channel 40V 22A (Ta), 49A (Tc) 2.3W (Ta), 40W (Tc) Surface Mount Power33, PowerTrench®	View
	FCP190N60E	ON Semiconductor, N-Channel 600V 20.6A (Tc) 208W (Tc) Through Hole TO-220-3, SuperFET® II	View
	NTE4153NT1G	ON Semiconductor, N-Channel 20V 915mA (Ta) 300mW (Tj) Surface Mount SC-89-3,	View

SI3424BDV-T1-GE3 - Tags

SI3424BDV-T1-GE3 SI3424BDV-T1-GE3 PDF SI3424BDV-T1-GE3 datasheet SI3424BDV-T1-GE3 specification SI3424BDV-T1-GE3 image SI3424BDV-T1-GE3 India Renesas Electronics India SI3424BDV-T1-GE3 buy SI3424BDV-T1-GE3 SI3424BDV-T1-GE3 price SI3424BDV-T1-GE3 distributor SI3424BDV-T1-GE3 supplier SI3424BDV-T1-GE3 wholesales