Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI3424BDV-T1-GE3

SI3424BDV-T1-GE3

SI3424BDV-T1-GE3

Part NumberSI3424BDV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 8A 6TSOP

DatasheetSI3424BDV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 8A (Tc) 2.1W (Ta), 2.98W (Tc) Surface Mount 6-TSOP

To learn about the specification of SI3424BDV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3424BDV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3424BDV-T1-GE3.
We are offering SI3424BDV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI3424BDV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI3424BDV
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.6nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	735pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 2.98W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

SI3424BDV-T1-GE3 - Related Products

	FQU4N50TU-WS	ON Semiconductor, N-Channel 500V 2.6A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK, QFET®	View
	IXFL132N50P3	IXYS, N-Channel 500V 63A (Tc) 520W (Tc) Through Hole ISOPLUS264™, HiPerFET™, Polar3™	View
	FDFMA3N109	ON Semiconductor, N-Channel 30V 2.9A (Tc) 1.5W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
	FDB060AN08A0	ON Semiconductor, N-Channel 75V 16A (Ta), 80A (Tc) 255W (Tc) Surface Mount D²PAK, PowerTrench®	View
	STP15N60M2-EP	STMicroelectronics, N-Channel 600V 11A (Tc) 110W (Tc) Through Hole TO-220, MDmesh™ M2-EP	View
	NDS355AN	ON Semiconductor, N-Channel 30V 1.7A (Ta) 500mW (Ta) Surface Mount SuperSOT-3,	View
	STW28N65M2	STMicroelectronics, N-Channel 650V 20A (Tc) 170W (Tc) Through Hole TO-247, MDmesh™ M2	View
	IPB073N15N5ATMA1	Infineon Technologies, N-Channel 150V 114A (Tc) 214W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™-5	View
	SIHB33N60EF-GE3	Vishay Siliconix, N-Channel 600V 33A (Tc) 278W (Tc) Surface Mount D²PAK (TO-263),	View
	PMV30UN2R	Nexperia USA Inc., N-Channel 20V 4.2A (Ta) 490mW (Ta), 5W (Tc) Surface Mount TO-236AB,	View
	FDMS7670AS	ON Semiconductor, N-Channel 30V 22A (Ta), 42A (Tc) 2.5W (Ta), 65W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™	View
	BSC123N08NS3GATMA1	Infineon Technologies, N-Channel 80V 11A (Ta), 55A (Tc) 2.5W (Ta), 66W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View

SI3424BDV-T1-GE3 - Tags

SI3424BDV-T1-GE3 SI3424BDV-T1-GE3 PDF SI3424BDV-T1-GE3 datasheet SI3424BDV-T1-GE3 specification SI3424BDV-T1-GE3 image SI3424BDV-T1-GE3 India Renesas Electronics India SI3424BDV-T1-GE3 buy SI3424BDV-T1-GE3 SI3424BDV-T1-GE3 price SI3424BDV-T1-GE3 distributor SI3424BDV-T1-GE3 supplier SI3424BDV-T1-GE3 wholesales