Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI3424BDV-T1-GE3

SI3424BDV-T1-GE3

SI3424BDV-T1-GE3

Part NumberSI3424BDV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 8A 6TSOP

DatasheetSI3424BDV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 8A (Tc) 2.1W (Ta), 2.98W (Tc) Surface Mount 6-TSOP

To learn about the specification of SI3424BDV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3424BDV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3424BDV-T1-GE3.
We are offering SI3424BDV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI3424BDV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI3424BDV
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.6nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	735pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 2.98W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

SI3424BDV-T1-GE3 - Related Products

	FDMC7672S	ON Semiconductor, N-Channel 30V 14.8A (Ta), 18A (Tc) 2.3W (Ta), 36W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®, SyncFET™	View
	PMBF170,215	Nexperia USA Inc., N-Channel 60V 300mA (Ta) 830mW (Tc) Surface Mount TO-236AB, TrenchMOS™	View
	PCP1403-TD-H	ON Semiconductor, N-Channel 60V 4.5A (Ta) 3.5W (Tc) Surface Mount SOT-89/PCP-1,	View
	IRFU120PBF	Vishay Siliconix, N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA,	View
	STD4LN80K5	STMicroelectronics, N-Channel 800V 3A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™ K5	View
	STL40N10F7	STMicroelectronics, N-Channel 100V 40A (Tc) 5W (Ta), 70W (Tc) Surface Mount PowerFlat™ (5x6), DeepGATE™, STripFET™ VII	View
	IRFR2405TRPBF	Infineon Technologies, N-Channel 55V 56A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	STF140N6F7	STMicroelectronics, N-Channel 60V 70A (Tc) 33W (Tc) Through Hole TO-220FP, STripFET™	View
	TSM220NB06CR RLG	Taiwan Semiconductor Corporation, N-Channel 60V 8A (Ta), 35A (Tc) 3.1W (Ta), 68W (Tc) Surface Mount 8-PDFN (5x6),	View
	IRFS52N15DTRLP	Infineon Technologies, N-Channel 150V 51A (Tc) 3.8W (Ta), 230W (Tc) Surface Mount D2PAK, HEXFET®	View
	RE1C002UNTCL	Rohm Semiconductor, N-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount EMT3F (SOT-416FL),	View
	SSM3K15ACT,L3F	Toshiba Semiconductor and Storage, N-Channel 30V 100mA (Ta) 100mW (Ta) Surface Mount CST3, U-MOSIII	View

SI3424BDV-T1-GE3 - Tags

SI3424BDV-T1-GE3 SI3424BDV-T1-GE3 PDF SI3424BDV-T1-GE3 datasheet SI3424BDV-T1-GE3 specification SI3424BDV-T1-GE3 image SI3424BDV-T1-GE3 India Renesas Electronics India SI3424BDV-T1-GE3 buy SI3424BDV-T1-GE3 SI3424BDV-T1-GE3 price SI3424BDV-T1-GE3 distributor SI3424BDV-T1-GE3 supplier SI3424BDV-T1-GE3 wholesales