Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI3424BDV-T1-GE3

SI3424BDV-T1-GE3

SI3424BDV-T1-GE3

Part NumberSI3424BDV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 8A 6TSOP

DatasheetSI3424BDV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 8A (Tc) 2.1W (Ta), 2.98W (Tc) Surface Mount 6-TSOP

To learn about the specification of SI3424BDV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3424BDV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3424BDV-T1-GE3.
We are offering SI3424BDV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI3424BDV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI3424BDV
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.6nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	735pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 2.98W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

SI3424BDV-T1-GE3 - Related Products

	CSD16321Q5	Texas Instruments, N-Channel 25V 31A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	SIS412DN-T1-GE3	Vishay Siliconix, N-Channel 30V 12A (Tc) 3.2W (Ta), 15.6W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	PSMN3R0-30YLDX	Nexperia USA Inc., N-Channel 30V 100A (Tc) 91W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	DMN26D0UT-7	Diodes Incorporated, N-Channel 20V 230mA (Ta) 300mW (Ta) Surface Mount SOT-523,	View
	IPDD60R080G7XTMA1	Infineon Technologies, N-Channel 600V 29A (Tc) 174W (Tc) Surface Mount PG-HDSOP-10-1, CoolMOS™ G7	View
	SSM3K336R,LF	Toshiba Semiconductor and Storage, N-Channel 30V 3A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII-H	View
	CSD18510Q5B	Texas Instruments, N-Channel 40V 300A (Tc) 156W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	FDY300NZ	ON Semiconductor, N-Channel 20V 600mA (Ta) 625mW (Ta) Surface Mount SC-89-3, PowerTrench®	View
	2N7002BKM,315	Nexperia USA Inc., N-Channel 60V 450mA (Ta) 360mW (Ta) Surface Mount DFN1006-3, Automotive, AEC-Q101, TrenchMOS™	View
	STD16N65M2	STMicroelectronics, N-Channel 650V 11A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ M2	View
	SISH472DN-T1-GE3	Vishay Siliconix, N-Channel 30V 15A (Ta), 20A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount PowerPAK® 1212-8SH, TrenchFET®	View
	IXFN300N20X3	IXYS, N-Channel 200V 300A (Tc) 695W (Tc) Chassis Mount SOT-227B, HiPerFET™	View

SI3424BDV-T1-GE3 - Tags

SI3424BDV-T1-GE3 SI3424BDV-T1-GE3 PDF SI3424BDV-T1-GE3 datasheet SI3424BDV-T1-GE3 specification SI3424BDV-T1-GE3 image SI3424BDV-T1-GE3 India Renesas Electronics India SI3424BDV-T1-GE3 buy SI3424BDV-T1-GE3 SI3424BDV-T1-GE3 price SI3424BDV-T1-GE3 distributor SI3424BDV-T1-GE3 supplier SI3424BDV-T1-GE3 wholesales