SI3424BDV-T1-GE3
SI3424BDV-T1-GE3
Part Number SI3424BDV-T1-GE3 Description MOSFET N-CH 30V 8A 6TSOP Package / Case SOT-23-6 Thin, TSOT-23-6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 8A (Tc) 2.1W (Ta), 2.98W (Tc) Surface Mount 6-TSOP
To learn about the specification of SI3424BDV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3424BDV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3424BDV-T1-GE3.
We are offering SI3424BDV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI3424BDV-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI3424BDV Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 28mOhm @ 7A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 735pF @ 15V FET Feature - Power Dissipation (Max) 2.1W (Ta), 2.98W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6
SI3424BDV-T1-GE3 - Related ProductsMore >>
SI7460DP-T1-E3 Vishay Siliconix, N-Channel 60V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
FDS5690 ON Semiconductor, N-Channel 60V 7A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
STD11NM65N STMicroelectronics, N-Channel 650V 11A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ II
View
IPD135N03LGATMA1 Infineon Technologies, N-Channel 30V 30A (Tc) 31W (Tc) Surface Mount PG-TO252-3, OptiMOS™
View
SQM40N15-38_GE3 Vishay Siliconix, N-Channel 150V 40A (Tc) 166W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
View
VN0106N3-G Microchip Technology, N-Channel 60V 350mA (Tj) 1W (Tc) Through Hole TO-92-3,
View
NTMFS4835NT1G ON Semiconductor, N-Channel 30V 13A (Ta), 130A (Tc) 890mW (Ta), 62.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
View
IPZ65R045C7XKSA1 Infineon Technologies, N-Channel 650V 46A (Tc) 227W (Tc) Through Hole PG-TO247, CoolMOS™ C7
View
STD46N6F7 STMicroelectronics, N-Channel 60V 15A (Tc) 60W (Tc) Surface Mount DPAK, STripFET™
View
SISH110DN-T1-GE3 Vishay Siliconix, N-Channel 20V 13.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH, TrenchFET® Gen II
View
SQJ464EP-T1_GE3 Vishay Siliconix, N-Channel 60V 32A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8,
View
IRFB4610PBF Infineon Technologies, N-Channel 100V 73A (Tc) 190W (Tc) Through Hole TO-220AB, HEXFET®
View
SI3424BDV-T1-GE3 - Tags
English
