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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDD86569_F085
Standard Package 2500
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2520pF @ 30V
FET Feature -
Power Dissipation (Max) 150W (Tj)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
FDH055N15A
ON Semiconductor, N-Channel 150V 158A (Tc) 429W (Tc) Through Hole TO-247-3, PowerTrench®
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IPN70R1K2P7SATMA1
Infineon Technologies, N-Channel 700V 4.5A (Tc) 6.3W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
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IXFA80N25X3
IXYS, N-Channel 250V 80A (Tc) 390W (Tc) Surface Mount TO-263AA, HiPerFET™
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STU6N65M2
STMicroelectronics, N-Channel 650V 4A (Tc) 60W (Tc) Through Hole IPAK (TO-251), MDmesh™
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IRLU014PBF
Vishay Siliconix, N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA,
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TSM60NB900CP ROG
Taiwan Semiconductor Corporation, N-Channel 600V 4A (Tc) 36.8W (Tc) Surface Mount TO-252, (D-Pak),
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R6020KNX
Rohm Semiconductor, N-Channel 600V 20A (Tc) 68W (Tc) Through Hole TO-220FM,
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STD7N80K5
STMicroelectronics, N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount DPAK, SuperMESH5™
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FQPF5N90
ON Semiconductor, N-Channel 900V 3A (Tc) 51W (Tc) Through Hole TO-220F, QFET®
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SIHB23N60E-GE3
Vishay Siliconix, N-Channel 600V 23A (Tc) 227W (Tc) Surface Mount D²PAK (TO-263),
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DMG3414U-7
Diodes Incorporated, N-Channel 20V 4.2A (Ta) 780mW (Ta) Surface Mount SOT-23-3,
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IRF6726MTRPBF
Infineon Technologies, N-Channel 30V 32A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT, HEXFET®
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