TK9J90E,S1E
TK9J90E,S1E
Part Number TK9J90E,S1E
Description MOSFET N-CH 900V TO-3PN
Package / Case TO-3P-3, SC-65-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 900V 9A (Ta) 250W (Tc) Through Hole TO-3P(N)
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TK9J90E,S1E - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK9J90E
Standard Package 25
Manufacturer Toshiba Semiconductor and Storage
Series -
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3
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