FDMC2610
FDMC2610
Part Number FDMC2610
Description MOSFET N-CH 200V 2.2A POWER33-8
Package / Case 8-PowerWDFN
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Lead Time To be Confirmed
Detailed Description N-Channel 200V 2.2A (Ta), 9.5A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3)
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FDMC2610 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDMC2610
Standard Package 1
Manufacturer ON Semiconductor
Series UniFET™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta), 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 100V
FET Feature -
Power Dissipation (Max) 2.1W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-MLP (3.3x3.3)
Package / Case 8-PowerWDFN
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Nexperia USA Inc., N-Channel 30V 51A (Tj) 34W (Tc) Surface Mount LFPAK56, Power-SO8,
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STMicroelectronics, N-Channel 950V 38A (Tc) 450W (Tc) Through Hole TO-247, MDmesh™ DK5
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FDMC2610 - Tags