FDMC8622
FDMC8622
Part Number FDMC8622
Description MOSFET N-CH 100V 4A POWER33
Package / Case 8-PowerWDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 100V 4A (Ta), 16A (Tc) 2.5W (Ta), 31W (Tc) Surface Mount 8-MLP (3.3x3.3)
To learn about the specification of FDMC8622, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FDMC8622 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FDMC8622.
We are offering FDMC8622 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
FDMC8622 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDMC8622
Standard Package 3000
Manufacturer ON Semiconductor
Series PowerTrench®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 4A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 56mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.3nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 402pF @ 50V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 31W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-MLP (3.3x3.3)
Package / Case 8-PowerWDFN
SSM3K16FU,LF
Toshiba Semiconductor and Storage, N-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount USM, π-MOSVI
View
IRFB4115PBF
Infineon Technologies, N-Channel 150V 104A (Tc) 380W (Tc) Through Hole TO-220AB, HEXFET®
View
TK55S10N1,LQ
Toshiba Semiconductor and Storage, N-Channel 100V 55A (Ta) 157W (Tc) Surface Mount DPAK+, U-MOSVIII-H
View
NTMTS0D6N04CTXG
ON Semiconductor, N-Channel 40V 533A (Tc) 5W,
View
STP110N8F7
STMicroelectronics, N-Channel 80V 80A (Tc) 170W (Tc) Through Hole TO-220, STripFET™
View
2N7002BK,215
Nexperia USA Inc., N-Channel 60V 350mA (Ta) 370mW (Ta) Surface Mount TO-236AB, Automotive, AEC-Q101, TrenchMOS™
View
BUZ11-NR4941
ON Semiconductor, N-Channel 50V 30A (Tc) 75W (Tc) Through Hole TO-220-3,
View
FDD10AN06A0
ON Semiconductor, N-Channel 60V 11A (Ta), 50A (Tc) 135W (Tc) Surface Mount TO-252AA, PowerTrench®
View
FQP8N60C
ON Semiconductor, N-Channel 600V 7.5A (Tc) 147W (Tc) Through Hole TO-220-3, QFET®
View
STL19N60DM2
STMicroelectronics, N-Channel 600V 11A (Tc) 90W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ DM2
View
IPW60R125CFD7XKSA1
Infineon Technologies, N-Channel 600V 18A (Tc) 92W (Tc) Through Hole PG-TO247-3, OptiMOS™
View
IXFH36N60P
IXYS, N-Channel 600V 36A (Tc) 650W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™, PolarHT™
View
FDMC8622 - Tags