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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQ2398ES
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 152pF @ 50V
FET Feature -
Power Dissipation (Max) 2W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
SIHD6N62ET1-GE3
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SIS406DN-T1-GE3
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IPB017N08N5ATMA1
Infineon Technologies, N-Channel 80V 120A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
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IPP77N06S212AKSA2
Infineon Technologies, N-Channel 55V 77A (Tc) 158W (Tc) Through Hole PG-TO220-3-1, OptiMOS™
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FDMS2672
ON Semiconductor, N-Channel 200V 3.7A (Ta), 20A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-MLP (5x6), Power56, UltraFET™
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SIR878BDP-T1-RE3
Vishay Siliconix, N-Channel 100V 12A (Ta), 42.5A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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STB57N65M5
STMicroelectronics, N-Channel 650V 42A (Tc) 250W (Tc) Surface Mount D2PAK, MDmesh™ V
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TSM4N90CZ C0G
Taiwan Semiconductor Corporation, N-Channel 900V 4A (Tc) 38.7W (Tc) Through Hole TO-220,
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TN2540N8-G
Microchip Technology, N-Channel 400V 260mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
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IPB60R080P7ATMA1
Infineon Technologies, N-Channel 650V 37A (Tc) 129W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™ P7
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STB40NF10LT4
STMicroelectronics, N-Channel 100V 40A (Tc) 150W (Tc) Surface Mount D2PAK, STripFET™ II
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IXFT50N85XHV
IXYS, N-Channel 850V 50A (Tc) 890W (Tc) Surface Mount TO-268, HiPerFET™
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