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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQ2398ES
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 152pF @ 50V
FET Feature -
Power Dissipation (Max) 2W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
APT24F50B
Microsemi Corporation, N-Channel 500V 24A (Tc) 335W (Tc) Through Hole TO-247 [B], POWER MOS 8™
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SIR844DP-T1-GE3
Vishay Siliconix, N-Channel 25V 50A (Tc) 5W (Ta), 50W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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SSM3K341R,LF
Toshiba Semiconductor and Storage, N-Channel 60V 6A (Ta) 1.2W (Ta) Surface Mount SOT-23F, U-MOSVIII-H
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BUK7275-100A,118
Nexperia USA Inc., N-Channel 100V 21.7A (Tc) 89W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
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CSD17318Q2T
Texas Instruments, N-Channel 30V 25A (Tc) 16W (Tc) Surface Mount 6-WSON (2x2), NexFET™
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SIHG23N60E-GE3
Vishay Siliconix, N-Channel 600V 23A (Tc) 227W (Tc) Through Hole TO-247AC,
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STD13NM60ND
STMicroelectronics, N-Channel 600V 11A (Tc) 109W (Tc) Surface Mount DPAK, FDmesh™ II
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STI55NF03L
STMicroelectronics, N-Channel 30V 55A (Tc) 80W (Tc) Through Hole I2PAK, STripFET™ II
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SPB11N60C3ATMA1
Infineon Technologies, N-Channel 650V 11A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2, CoolMOS™
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TSM038N03PQ33 RGG
Taiwan Semiconductor Corporation, N-Channel 30V 78A (Tc) 39W (Tc) Surface Mount 8-PDFN (3x3),
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IPP120N20NFDAKSA1
Infineon Technologies, N-Channel 200V 84A (Tc) 300W (Tc) Through Hole PG-TO220-3, OptiMOS™
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DMG3404L-7
Diodes Incorporated, N-Channel 30V 4.2A (Ta) 780mW (Ta) Surface Mount SOT-23,
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