FDP3632
FDP3632
Part Number FDP3632 Description MOSFET N-CH 100V 80A TO-220AB Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 12A (Ta), 80A (Tc) 310W (Tc) Through Hole TO-220-3
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FDP3632 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDB3632, FDH3632, FDP3632 Standard Package 800 Manufacturer ON Semiconductor Series PowerTrench® Packaging Tube Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 12A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 9mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V FET Feature - Power Dissipation (Max) 310W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3
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ZXMN7A11KTC Diodes Incorporated, N-Channel 70V 4.2A (Ta) 2.11W (Ta) Surface Mount TO-252-3,
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IPP90R1K2C3XKSA1 Infineon Technologies, N-Channel 900V 5.1A (Tc) 83W (Tc) Through Hole PG-TO220-3, CoolMOS™
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