FDV302P
FDV302P
Part Number FDV302P
Description MOSFET P-CH 25V 120MA SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
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Lead Time To be Confirmed
Detailed Description P-Channel 25V 120mA (Ta) 350mW (Ta) Surface Mount SOT-23
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FDV302P - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDV302P
Standard Package 3000
Manufacturer ON Semiconductor
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Rds On (Max) @ Id, Vgs 10Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.31nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 11pF @ 10V
FET Feature -
Power Dissipation (Max) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
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