SI4435DDY-T1-E3
SI4435DDY-T1-E3
Part Number SI4435DDY-T1-E3 Description MOSFET P-CH 30V 11.4A 8SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO
To learn about the specification of SI4435DDY-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4435DDY-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4435DDY-T1-E3.
We are offering SI4435DDY-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4435DDY-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si4435DDY Standard Package 2500 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 24mOhm @ 9.1A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta), 5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4435DDY-T1-E3 - Related ProductsMore >>
DMP34M4SPS-13 Diodes Incorporated, P-Channel 30V 135A (Tc) 1.5W Surface Mount PowerDI5060-8,
View
SSM6J216FE,LF Toshiba Semiconductor and Storage, P-Channel 12V 4.8A (Ta) 700mW (Ta) Surface Mount ES6, U-MOSVI
View
DMP4025SFGQ-7 Diodes Incorporated, P-Channel 40V 7.2A (Ta) 810mW (Ta) Surface Mount PowerDI3333-8, Automotive, AEC-Q101
View
FDMA520PZ ON Semiconductor, P-Channel 20V 7.3A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®
View
RAL025P01TCR Rohm Semiconductor, P-Channel 12V 2.5A (Ta) 320mW (Ta) Surface Mount TUMT6,
View
NTMS5P02R2G ON Semiconductor, P-Channel 20V 3.95A (Ta) 790mW (Ta) Surface Mount 8-SOIC,
View
FDFS2P106A ON Semiconductor, P-Channel 60V 3A (Ta) 900mW (Ta) Surface Mount 8-SOIC, PowerTrench®
View
STL9P3LLH6 STMicroelectronics, P-Channel 30V 9A (Tc) 3W (Ta) Surface Mount PowerFlat™ (3.3x3.3), STripFET™ H6
View
SI9435BDY-T1-GE3 Vishay Siliconix, P-Channel 30V 4.1A (Ta) 1.3W (Ta) Surface Mount 8-SO, TrenchFET®
View
CSD25483F4 Texas Instruments, P-Channel 20V 1.6A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, NexFET™
View
SSM6J213FE(TE85L,F Toshiba Semiconductor and Storage, P-Channel 20V 2.6A (Ta) 500mW (Ta) Surface Mount ES6, U-MOSVI
View
SI4465ADY-T1-GE3 Vishay Siliconix, P-Channel 8V 3W (Ta), 6.5W (Tc) Surface Mount 8-SO, TrenchFET®
View
SI4435DDY-T1-E3 - Tags
English
