Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	FGH80N60FD
Standard Package	450
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
IGBT Type	Field Stop
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	80A
Current - Collector Pulsed (Icm)	160A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 40A
Power - Max	290W
Switching Energy	1mJ (on), 520µJ (off)
Input Type	Standard
Gate Charge	120nC
Td (on/off) @ 25°C	21ns/126ns
Test Condition	400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)	36ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3

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IRG4PH50SPBF	Infineon Technologies, IGBT 1200V 57A 200W Through Hole TO-247AC,	View
FGL40N120ANDTU	ON Semiconductor, IGBT NPT 1200V 64A 500W Through Hole TO-264-3,	View
STGWT30H65FB	STMicroelectronics, IGBT Trench Field Stop 650V 30A 260W Through Hole TO-3P,	View
AOKS40B65H1	Alpha & Omega Semiconductor Inc., IGBT 650V 80A 300W Through Hole TO-247, Alpha IGBT™	View
STGW25H120F2	STMicroelectronics, IGBT Trench Field Stop 1200V 50A 375W Through Hole TO-247,	View
IRG4BC20KDSTRLP	Infineon Technologies, IGBT 600V 16A 60W Surface Mount D2PAK,	View
FGH75T65SHDTLN4	ON Semiconductor, IGBT Trench Field Stop 650V 150A 455W Through Hole TO-247-4,	View
APT36GA60BD15	Microsemi Corporation, IGBT PT 600V 65A 290W Through Hole TO-247 [B], POWER MOS 8™	View
APT64GA90B2D30	Microsemi Corporation, IGBT PT 900V 117A 500W Through Hole, POWER MOS 8™	View
FGA15N120ANTDTU-F109	ON Semiconductor, IGBT NPT and Trench 1200V 30A 186W Through Hole TO-3P,	View
AFGHL40T65SPD	ON Semiconductor, IGBT Trench Field Stop 650V 80A 267W Through Hole TO-247-3, Automotive, AEC-Q101	View

FGH80N60FDTU

Part NumberFGH80N60FDTU