FQA65N20
FQA65N20
Part Number FQA65N20 Description MOSFET N-CH 200V 65A TO-3P Package / Case TO-3P-3, SC-65-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 65A (Tc) 310W (Tc) Through Hole TO-3PN
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FQA65N20 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQA65N20 Standard Package 450 Manufacturer ON Semiconductor Series QFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 65A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 32mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 7900pF @ 25V FET Feature - Power Dissipation (Max) 310W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PN Package / Case TO-3P-3, SC-65-3
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