FQA8N100C
FQA8N100C
Part Number FQA8N100C
Description MOSFET N-CH 1000V 8A TO-3P
Package / Case TO-3P-3, SC-65-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 1000V 8A (Tc) 225W (Tc) Through Hole TO-3PN
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FQA8N100C - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQA8N100C
Standard Package 450
Manufacturer ON Semiconductor
Series QFET®
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.45Ohm @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 25V
FET Feature -
Power Dissipation (Max) 225W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PN
Package / Case TO-3P-3, SC-65-3
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