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FQB27P06TM

FQB27P06TM

Part NumberFQB27P06TM

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 60V 27A D2PAK

DatasheetFQB27P06

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 27A (Tc) 3.75W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263AB)

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FQB27P06TM - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FQB27P06
Standard Package	1
Manufacturer	ON Semiconductor
Series	QFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	70mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	43nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 25V
FET Feature	-
Power Dissipation (Max)	3.75W (Ta), 120W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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