FQD1N80TM
FQD1N80TM
Part Number FQD1N80TM
Description MOSFET N-CH 800V 1A DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 800V 1A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount D-Pak
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FQD1N80TM - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQD1N80, FQU1N80
Standard Package 1
Manufacturer ON Semiconductor
Series QFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 20Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 195pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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