Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA462DJ-T1-GE3

SIA462DJ-T1-GE3

SIA462DJ-T1-GE3

Part NumberSIA462DJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 12A SC-70-6L

DatasheetSIA462DJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA462DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA462DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA462DJ-T1-GE3.
We are offering SIA462DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA462DJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA462DJ
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	18mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	570pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA462DJ-T1-GE3 - Related Products

	STP4LN80K5	STMicroelectronics, N-Channel 800V 3A (Tc) 60W (Tc) Through Hole TO-220, MDmesh™ K5	View
	FDN359AN	ON Semiconductor, N-Channel 30V 2.7A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®	View
	STY60NM60	STMicroelectronics, N-Channel 600V 60A (Tc) 560W (Tc) Through Hole MAX247™, MDmesh™	View
	ZVN4306GVTA	Diodes Incorporated, N-Channel 60V 2.1A (Ta) 3W (Ta) Surface Mount SOT-223,	View
	CSD19535KTTT	Texas Instruments, N-Channel 100V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™	View
	NX7002BKR	Nexperia USA Inc., N-Channel 60V 270mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount TO-236AB,	View
	IRFS4321TRLPBF	Infineon Technologies, N-Channel 150V 85A (Tc) 350W (Tc) Surface Mount D2PAK, HEXFET®	View
	BUK7606-55B,118	Nexperia USA Inc., N-Channel 55V 75A (Tc) 254W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	ZVN4106FTA	Diodes Incorporated, N-Channel 60V 200mA (Ta) 350mW (Ta) Surface Mount SOT-23-3,	View
	FDPF16N50T	ON Semiconductor, N-Channel 500V 16A (Tc) 38.5W (Tc) Through Hole TO-220F, UniFET™	View
	IRFI1310NPBF	Infineon Technologies, N-Channel 100V 24A (Tc) 56W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®	View
	BUK7Y7R6-40EX	Nexperia USA Inc., N-Channel 40V 79A (Tc) 94.3W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View

SIA462DJ-T1-GE3 - Tags

SIA462DJ-T1-GE3 SIA462DJ-T1-GE3 PDF SIA462DJ-T1-GE3 datasheet SIA462DJ-T1-GE3 specification SIA462DJ-T1-GE3 image SIA462DJ-T1-GE3 India Renesas Electronics India SIA462DJ-T1-GE3 buy SIA462DJ-T1-GE3 SIA462DJ-T1-GE3 price SIA462DJ-T1-GE3 distributor SIA462DJ-T1-GE3 supplier SIA462DJ-T1-GE3 wholesales