FQD2N100TM

Part NumberFQD2N100TM

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FQD2N100, FQU2N100
Standard Package	1
Manufacturer	ON Semiconductor
Series	QFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	9Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15.5nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	520pF @ 25V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 50W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-Pak
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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