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IRFHM830TRPBF

IRFHM830TRPBF

Part NumberIRFHM830TRPBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 30V 21A PQFN

DatasheetIRFHM830PbF

Package / Case8-VQFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 21A (Ta), 40A (Tc) 2.7W (Ta), 37W (Tc) Surface Mount PQFN (3x3)

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IRFHM830TRPBF - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRFHM830PbF
Standard Package	1
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	21A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2155pF @ 25V
FET Feature	-
Power Dissipation (Max)	2.7W (Ta), 37W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PQFN (3x3)
Package / Case	8-VQFN Exposed Pad

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