FQP6N80C
FQP6N80C
Part Number FQP6N80C Description MOSFET N-CH 800V 5.5A TO-220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 5.5A (Tc) 158W (Tc) Through Hole TO-220-3
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FQP6N80C - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQP(F)6N80C Standard Package 1000 Manufacturer ON Semiconductor Series QFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 2.75A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1310pF @ 25V FET Feature - Power Dissipation (Max) 158W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3
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