FQT4N20LTF
FQT4N20LTF
Part Number FQT4N20LTF Description MOSFET N-CH 200V 0.85A SOT-223 Package / Case TO-261-4, TO-261AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 850mA (Tc) 2.2W (Tc) Surface Mount SOT-223-4
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FQT4N20LTF - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQT4N20L Standard Package 1 Manufacturer ON Semiconductor Series QFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 850mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 1.35Ohm @ 425mA, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 310pF @ 25V FET Feature - Power Dissipation (Max) 2.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223-4 Package / Case TO-261-4, TO-261AA
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