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FQU2N90TU-WS

FQU2N90TU-WS

Part NumberFQU2N90TU-WS

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 900V 1.7A IPAK

DatasheetFQD2N90/FQU2N90

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 900V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Through Hole I-PAK

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FQU2N90TU-WS - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FQD2N90/FQU2N90
Standard Package	5040
Manufacturer	ON Semiconductor
Series	QFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25°C	1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	7.2Ohm @ 850mA, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 25V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 50W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

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