GA08JT17-247


GA08JT17-247

Part NumberGA08JT17-247

Manufacturer

Description

Datasheet

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

GA08JT17-247 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package30
ManufacturerGeneSiC Semiconductor
Series-
PackagingTube
Part StatusActive
FET Type-
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1700V
Current - Continuous Drain (Id) @ 25°C8A (Tc) (90°C)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs250mOhm @ 8A
Vgs(th) (Max) @ Id-
Vgs (Max)-
FET Feature-
Power Dissipation (Max)48W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AB
Package / CaseTO-247-3

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GA08JT17-247 - Tags

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