GB01SLT12-252
GB01SLT12-252
Part Number GB01SLT12-252 Description DIODE SILICON 1.2KV 1A TO252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Diode Silicon Carbide Schottky 1200V 1A Surface Mount TO-252
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GB01SLT12-252 - Product Attributes
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Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet GB01SLT12-252 Standard Package 1 Manufacturer GeneSiC Semiconductor Series - Packaging Cut Tape (CT) Part Status Active Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.8V @ 1A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 2µA @ 1200V Capacitance @ Vr, F 69pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-252 Operating Temperature - Junction -55°C ~ 175°C Base Part Number GB01SLT12
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