HBDM60V600W-7


HBDM60V600W-7

Part NumberHBDM60V600W-7

Manufacturer

Description

Datasheet

Package / Case6-TSSOP, SC-88, SOT-363

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

HBDM60V600W-7 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet
Standard Package1
ManufacturerDiodes Incorporated
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypeNPN, PNP
Current - Collector (Ic) (Max)500mA, 600mA
Voltage - Collector Emitter Breakdown (Max)65V, 60V
Vce Saturation (Max) @ Ib, Ic400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 1V / 100 @ 150mA, 10V
Power - Max200mW
Frequency - Transition100MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSOT-363
Base Part NumberHBDM60V600

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HBDM60V600W-7 - Tags

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