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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet MMDT5451
Standard Package 1
Manufacturer Diodes Incorporated
Series -
Packaging Cut Tape (CT)
Part Status Active
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 160V, 150V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V / 60 @ 10mA, 5V
Power - Max 200mW
Frequency - Transition 300MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Base Part Number MMDT5451
DME505010R
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Infineon Technologies, Bipolar (BJT) Transistor Array NPN, PNP 80V 500mA 100MHz 330mW Surface Mount PG-SC74-6,
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Diodes Incorporated, Bipolar (BJT) Transistor Array NPN, PNP 50V, 40V 4A, 3A 165MHz, 190MHz 1.7W Surface Mount 8-DFN (3x2),
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DME20B010R
Panasonic Electronic Components, Bipolar (BJT) Transistor Array NPN, PNP Complementary Darlington 50V 100mA 150MHz 300mW Surface Mount Mini5-G3-B,
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