HN2C01FU-Y(TE85L,F

Part NumberHN2C01FU-Y(TE85L,F

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Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet	HN2C01FU
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	2 NPN (Dual)
Current - Collector (Ic) (Max)	150mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 2mA, 6V
Power - Max	200mW
Frequency - Transition	80MHz
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	US6

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ULN2804A	STMicroelectronics, Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 2.25W Through Hole 18-DIP,	View
MMDT4401-7-F	Diodes Incorporated, Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 600mA 250MHz 200mW Surface Mount SOT-363,	View
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ULN2802A	STMicroelectronics, Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 2.25W Through Hole 18-DIP,	View
MMDT4124-7-F	Diodes Incorporated, Bipolar (BJT) Transistor Array 2 NPN (Dual) 25V 200mA 300MHz 200mW Surface Mount SOT-363,	View
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MBT2222ADW1T1G	ON Semiconductor, Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 600mA 300MHz 150mW Surface Mount SC-88/SC70-6/SOT-363,	View
ULN2003AIPW	Texas Instruments, Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-TSSOP,	View