HUF75652G3
HUF75652G3
Part Number HUF75652G3
Description MOSFET N-CH 100V 75A TO-247
Package / Case TO-247-3
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Lead Time To be Confirmed
Detailed Description N-Channel 100V 75A (Tc) 515W (Tc) Through Hole TO-247-3
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HUF75652G3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet HUF75652G3
Standard Package 450
Manufacturer ON Semiconductor
Series UltraFET™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 475nC @ 20V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7585pF @ 25V
FET Feature -
Power Dissipation (Max) 515W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
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