IAUT200N08S5N023ATMA1
IAUT200N08S5N023ATMA1
Part Number IAUT200N08S5N023ATMA1
Description 80V 200A 2.3MOHM TOLL
Package / Case 8-PowerSFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 80V 200A (Tc) 200W (Tc) Surface Mount PG-HSOF-8-1
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IAUT200N08S5N023ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IAUT200N08S5N023
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™-5
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7670pF @ 40V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-1
Package / Case 8-PowerSFN
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