IPA60R170CFD7XKSA1
IPA60R170CFD7XKSA1
Part Number IPA60R170CFD7XKSA1 Description MOSFET N-CH TO220FP-3 Package / Case TO-220-3 Full PackUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 8A (Tc) 26W (Tc) Through Hole PG-TO220 Full Pack
To learn about the specification of IPA60R170CFD7XKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPA60R170CFD7XKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPA60R170CFD7XKSA1.
We are offering IPA60R170CFD7XKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPA60R170CFD7XKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPA60R170CFD7 Standard Package 500 Manufacturer Infineon Technologies Series CoolMOS™ CFD7 Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 170mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1199pF @ 400V FET Feature - Power Dissipation (Max) 26W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220 Full Pack Package / Case TO-220-3 Full Pack
IPA60R170CFD7XKSA1 - Related ProductsMore >>
DMG6402LVT-7 Diodes Incorporated, N-Channel 30V 6A (Ta) 1.75W (Ta) Surface Mount TSOT-26,
View
NVTFS4C08NTAG ON Semiconductor, N-Channel 30V 17A (Ta) 3.1W (Ta), 31W (Tc) Surface Mount 8-WDFN (3.3x3.3),
View
PSMN4R5-30YLC,115 Nexperia USA Inc., N-Channel 30V 84A (Tc) 61W (Tc) Surface Mount LFPAK56, Power-SO8,
View
CDM2205-800FP SL Central Semiconductor Corp, N-Channel 800V 5A (Tc) 48W (Tc) Through Hole TO-220FP,
View
RUM003N02T2L Rohm Semiconductor, N-Channel 20V 300mA (Ta) 150mW (Ta) Surface Mount VMT3,
View
SISA04DN-T1-GE3 Vishay Siliconix, N-Channel 30V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
SSM3K7002KF,LF Toshiba Semiconductor and Storage, N-Channel 60V 400mA (Ta) 270mW (Ta) Surface Mount S-Mini, U-MOSVII-H
View
STD7ANM60N STMicroelectronics, N-Channel 600V 5A (Tc) 45W (Tc) Surface Mount DPAK, MDmesh™ II
View
IXFP3N120 IXYS, N-Channel 1200V 3A (Tc) 200W (Tc) Through Hole TO-220AB, HiPerFET™
View
SIRA72DP-T1-GE3 Vishay Siliconix, N-Channel 40V 60A (Tc) 56.8W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
View
RCX450N20 Rohm Semiconductor, N-Channel 200V 45A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM,
View
STP15N60M2-EP STMicroelectronics, N-Channel 600V 11A (Tc) 110W (Tc) Through Hole TO-220, MDmesh™ M2-EP
View
IPA60R170CFD7XKSA1 - Tags
English
