IPA80R360P7XKSA1
IPA80R360P7XKSA1
Part Number IPA80R360P7XKSA1
Description MOSFET N-CHANNEL 800V 13A TO220
Package / Case TO-220-3 Full Pack
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 800V 13A (Tc) 30W (Tc) Through Hole PG-TO220 Full Pack
To learn about the specification of IPA80R360P7XKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPA80R360P7XKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPA80R360P7XKSA1.
We are offering IPA80R360P7XKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPA80R360P7XKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPA80R360P7
Standard Package 500
Manufacturer Infineon Technologies
Series CoolMOS™ P7
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 930pF @ 500V
FET Feature -
Power Dissipation (Max) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220 Full Pack
Package / Case TO-220-3 Full Pack
IPA80R360P7XKSA1 - Related ProductsMore >>
STU5N60M2
STMicroelectronics, N-Channel 600V 3.7A (Tc) 45W (Tc) Through Hole TO-220, MDmesh™ II Plus
View
FCH070N60E
ON Semiconductor, N-Channel 600V 52A (Tc) 481W (Tc) Through Hole TO-247 Long Leads, SuperFET® II
View
IRLD014PBF
Vishay Siliconix, N-Channel 60V 1.7A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,
View
DMN2058UW-7
Diodes Incorporated, N-Channel 20V 3.5A (Ta) 500mW (Ta) Surface Mount SOT-323,
View
SSM3K7002KFU,LF
Toshiba Semiconductor and Storage, N-Channel 60V 400mA (Ta) 150mW (Ta) Surface Mount USM, U-MOSVII-H
View
IRLML6344TRPBF
Infineon Technologies, N-Channel 30V 5A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
View
ZVN4525E6TA
Diodes Incorporated, N-Channel 250V 230mA (Ta) 1.1W (Ta) Surface Mount SOT-23-6,
View
DMN2028UVT-7
Diodes Incorporated, N-Channel 20V 6.2A (Ta) 1.2W (Ta) Surface Mount TSOT-26,
View
IRF730APBF
Vishay Siliconix, N-Channel 400V 5.5A (Tc) 74W (Tc) Through Hole TO-220AB,
View
TN2106K1-G
Microchip Technology, N-Channel 60V 280mA (Tj) 360mW (Tc) Surface Mount TO-236AB (SOT23),
View
ZXMN10A09KTC
Diodes Incorporated, N-Channel 100V 5A (Ta) 2.15W (Ta) Surface Mount TO-252-3,
View
SI4488DY-T1-E3
Vishay Siliconix, N-Channel 150V 3.5A (Ta) 1.56W (Ta) Surface Mount 8-SO, TrenchFET®
View
IPA80R360P7XKSA1 - Tags