IPAW60R280CEXKSA1
IPAW60R280CEXKSA1
Part Number IPAW60R280CEXKSA1
Description MOSFET N-CH 600V TO220-3
Package / Case TO-220-3 Full Pack, Variant
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 19.3A (Tc) 32W (Tc) Through Hole PG-TO220 Full Pack, Wide Creepage
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IPAW60R280CEXKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPAW60R280CE
Standard Package 450
Manufacturer Infineon Technologies
Series CoolMOS™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 19.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 100V
FET Feature Super Junction
Power Dissipation (Max) 32W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220 Full Pack, Wide Creepage
Package / Case TO-220-3 Full Pack, Variant
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