Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPB017N10N5ATMA1

IPB017N10N5ATMA1

IPB017N10N5ATMA1

Part NumberIPB017N10N5ATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 180A D2PAK-7

DatasheetIPB017N10N5

Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 180A (Tc) 375W (Tc) Surface Mount PG-TO263-7

To learn about the specification of IPB017N10N5ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB017N10N5ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB017N10N5ATMA1.
We are offering IPB017N10N5ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPB017N10N5ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPB017N10N5
Standard Package	1000
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 279µA
Gate Charge (Qg) (Max) @ Vgs	210nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	15600pF @ 50V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)

IPB017N10N5ATMA1 - Related Products

	R6025JNXC7G	Rohm Semiconductor, N-Channel 600V 25A (Tc) 85W (Tc) Through Hole TO-220FM,	View
	TK65S04N1L,LQ	Toshiba Semiconductor and Storage, N-Channel 40V 65A (Ta) 107W (Tc) Surface Mount DPAK+, U-MOSVIII-H	View
	SPD04N80C3ATMA1	Infineon Technologies, N-Channel 800V 4A (Tc) 63W (Tc) Surface Mount PG-TO252-3, CoolMOS™	View
	STI55NF03L	STMicroelectronics, N-Channel 30V 55A (Tc) 80W (Tc) Through Hole I2PAK, STripFET™ II	View
	SIHA22N60E-E3	Vishay Siliconix, N-Channel 600V 21A (Tc) 35W (Tc) Through Hole TO-220 Full Pack,	View
	FCA16N60N	ON Semiconductor, N-Channel 600V 16A (Tc) 134.4W (Tc) Through Hole TO-3PN, SupreMOS™	View
	SI4896DY-T1-E3	Vishay Siliconix, N-Channel 80V 6.7A (Ta) 1.56W (Ta) Surface Mount 8-SO, TrenchFET®	View
	FDB050AN06A0	ON Semiconductor, N-Channel 60V 18A (Ta), 80A (Tc) 245W (Tc) Surface Mount D²PAK, PowerTrench®	View
	IPDD60R190G7XTMA1	Infineon Technologies, N-Channel 600V 13A (Tc) 76W (Tc) Surface Mount PG-HDSOP-10-1, CoolMOS™ G7	View
	FCB20N60FTM	ON Semiconductor, N-Channel 600V 20A (Tc) 208W (Tc) Surface Mount D²PAK, SuperFET™	View
	SUP10250E-GE3	Vishay Siliconix, N-Channel 250V 63A (Tc) 375W (Tc) Through Hole TO-220AB, ThunderFET®	View
	SISS06DN-T1-GE3	Vishay Siliconix, N-Channel 30V 47.6A (Ta), 172.6A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen IV	View

IPB017N10N5ATMA1 - Tags

IPB017N10N5ATMA1 IPB017N10N5ATMA1 PDF IPB017N10N5ATMA1 datasheet IPB017N10N5ATMA1 specification IPB017N10N5ATMA1 image IPB017N10N5ATMA1 India Renesas Electronics India IPB017N10N5ATMA1 buy IPB017N10N5ATMA1 IPB017N10N5ATMA1 price IPB017N10N5ATMA1 distributor IPB017N10N5ATMA1 supplier IPB017N10N5ATMA1 wholesales