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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD90N04S4L-04
Standard Package 1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 2.2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 4690pF @ 25V
FET Feature -
Power Dissipation (Max) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Texas Instruments, N-Channel 100V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™
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IPD90N04S404ATMA1
Infineon Technologies, N-Channel 40V 90A (Tc) 71W (Tc) Surface Mount PG-TO252-3-313, Automotive, AEC-Q101, OptiMOS™
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IRLR3114ZTRPBF
Infineon Technologies, N-Channel 40V 42A (Tc) 140W (Tc) Surface Mount D-Pak, HEXFET®
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