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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD90N04S4L-04
Standard Package 1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 2.2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 4690pF @ 25V
FET Feature -
Power Dissipation (Max) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IPI90N04S402AKSA1
Infineon Technologies, N-Channel 40V 90A (Tc) 150W (Tc) Through Hole PG-TO262-3, OptiMOS™
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Vishay Siliconix, N-Channel 40V 120A (Tc) 375W (Tc) Through Hole TO-220AB, ThunderFET®
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ON Semiconductor, N-Channel 200V 3.8A (Tc) 2.5W (Ta), 37W (Tc) Surface Mount D-Pak, QFET®
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STMicroelectronics, N-Channel 100V 80A (Tc) 300W (Tc) Through Hole TO-220AB, STripFET™ II
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