Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPB019N08N3GATMA1

IPB019N08N3GATMA1

IPB019N08N3GATMA1

Part NumberIPB019N08N3GATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 80V 180A TO263-7

DatasheetIPB019N08N3 G

Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7

To learn about the specification of IPB019N08N3GATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB019N08N3GATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB019N08N3GATMA1.
We are offering IPB019N08N3GATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPB019N08N3GATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPB019N08N3 G
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	206nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	14200pF @ 40V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)

IPB019N08N3GATMA1 - Related Products

	BSS138W-7-F	Diodes Incorporated, N-Channel 50V 200mA (Ta) 200mW (Ta) Surface Mount SOT-323,	View
	IRFB23N15DPBF	Infineon Technologies, N-Channel 150V 23A (Tc) 3.8W (Ta), 136W (Tc) Through Hole TO-220AB, HEXFET®	View
	FDB15N50	ON Semiconductor, N-Channel 500V 15A (Tc) 300W (Tc) Surface Mount D²PAK,	View
	IPD034N06N3GATMA1	Infineon Technologies, N-Channel 60V 100A (Tc) 167W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	STU10N60M2	STMicroelectronics, N-Channel 600V 7.5A (Tc) 85W (Tc) Through Hole I-PAK, MDmesh™ II Plus	View
	FDS3572	ON Semiconductor, N-Channel 80V 8.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	IRFP360PBF	Vishay Siliconix, N-Channel 400V 23A (Tc) 280W (Tc) Through Hole TO-247-3,	View
	STW24N60M2	STMicroelectronics, N-Channel 600V 18A (Tc) 150W (Tc) Through Hole TO-247, MDmesh™ II Plus	View
	FDMS86252L	ON Semiconductor, N-Channel 150V 4.4A (Ta) 2.5W (Ta), 50W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	SI7464DP-T1-GE3	Vishay Siliconix, N-Channel 200V 1.8A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SUP40012EL-GE3	Vishay Siliconix, N-Channel 40V 150A (Tc) 150W (Tc) Through Hole TO-220AB, TrenchFET®	View
	IRFB7446PBF	Infineon Technologies, N-Channel 40V 120A (Tc) 99W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™	View

IPB019N08N3GATMA1 - Tags

IPB019N08N3GATMA1 IPB019N08N3GATMA1 PDF IPB019N08N3GATMA1 datasheet IPB019N08N3GATMA1 specification IPB019N08N3GATMA1 image IPB019N08N3GATMA1 India Renesas Electronics India IPB019N08N3GATMA1 buy IPB019N08N3GATMA1 IPB019N08N3GATMA1 price IPB019N08N3GATMA1 distributor IPB019N08N3GATMA1 supplier IPB019N08N3GATMA1 wholesales