Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPB026N06NATMA1

IPB026N06NATMA1

IPB026N06NATMA1

Part NumberIPB026N06NATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 60V 25A TO263-3

DatasheetIPB026N06N

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 25A (Ta), 100A (Tc) 3W (Ta), 136W (Tc) Surface Mount D²PAK (TO-263AB)

To learn about the specification of IPB026N06NATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPB026N06NATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPB026N06NATMA1.
We are offering IPB026N06NATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPB026N06NATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPB026N06N
Standard Package	1000
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	25A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	2.8V @ 75µA
Gate Charge (Qg) (Max) @ Vgs	56nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4100pF @ 30V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 136W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB026N06NATMA1 - Related Products

	STP9NK50Z	STMicroelectronics, N-Channel 500V 7.2A (Tc) 110W (Tc) Through Hole TO-220AB, SuperMESH™	View
	IXFP4N85XM	IXYS, N-Channel 850V 3.5A (Tc) 35W (Tc) Through Hole TO-220, HiPerFET™	View
	RCJ300N20TL	Rohm Semiconductor, N-Channel 200V 30A (Tc) 1.56W (Ta), 40W (Tc) Surface Mount LPTS,	View
	SIRA58DP-T1-GE3	Vishay Siliconix, N-Channel 40V 60A (Tc) 27.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	FDB8444	ON Semiconductor, N-Channel 40V 70A (Tc) 167W (Tc) Surface Mount TO-263AB, PowerTrench®	View
	RUS100N02TB	Rohm Semiconductor, N-Channel 20V 10A (Ta) 2W (Ta) Surface Mount 8-SOP,	View
	IRF7854TRPBF	Infineon Technologies, N-Channel 80V 10A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	SI8812DB-T2-E1	Vishay Siliconix, N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®	View
	TK8R2A06PL,S4X	Toshiba Semiconductor and Storage, N-Channel 60V 50A (Tc) 36W (Tc) Through Hole TO-220SIS, U-MOSIX-H	View
	IRFR2905ZTRPBF	Infineon Technologies, N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	CDM7-650 TR13	Central Semiconductor Corp, N-Channel 650V 7A (Ta) 1.12W (Ta), 140W (Tc) Surface Mount DPAK,	View
	FQD10N20LTM	ON Semiconductor, N-Channel 200V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Surface Mount TO-252, (D-Pak), QFET®	View

IPB026N06NATMA1 - Tags

IPB026N06NATMA1 IPB026N06NATMA1 PDF IPB026N06NATMA1 datasheet IPB026N06NATMA1 specification IPB026N06NATMA1 image IPB026N06NATMA1 India Renesas Electronics India IPB026N06NATMA1 buy IPB026N06NATMA1 IPB026N06NATMA1 price IPB026N06NATMA1 distributor IPB026N06NATMA1 supplier IPB026N06NATMA1 wholesales