IPB036N12N3GATMA1
IPB036N12N3GATMA1
Part Number IPB036N12N3GATMA1 Description MOSFET N-CH 120V 180A TO263-7 Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CBUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 120V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7
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IPB036N12N3GATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPB036N12N3 G Standard Package 1000 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 120V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.6mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs 211nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13800pF @ 60V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-7 Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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