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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx041N12N3 G, IPB038N12N3 G Standard Package 1000 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 120V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.8mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs 211nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13800pF @ 60V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPP60R080P7XKSA1 Infineon Technologies, N-Channel 600V 37A (Tc) 129W (Tc) Through Hole PG-TO220-3, CoolMOS™ P7
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PSMN050-80BS,118 Nexperia USA Inc., N-Channel 80V 22A (Tc) 56W (Tc) Surface Mount D2PAK,
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FDD8870 ON Semiconductor, N-Channel 30V 21A (Ta), 160A (Tc) 160W (Tc) Surface Mount TO-252AA, PowerTrench®
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CSD16570Q5BT Texas Instruments, N-Channel 25V 100A (Ta) 3.2W (Ta), 195W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
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BSZ0902NSIATMA1 Infineon Technologies, N-Channel 30V 21A (Ta), 40A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™
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IPN50R650CEATMA1 Infineon Technologies, N-Channel 500V 9A (Tc) 5W (Tc) Surface Mount PG-SOT223, CoolMOS™ CE
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STD12N65M2 STMicroelectronics, N-Channel 650V 8A (Tc) 85W (Tc) Surface Mount DPAK, MDmesh™ M2
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SSM3K16FU,LF Toshiba Semiconductor and Storage, N-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount USM, π-MOSVI
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STF38N65M5 STMicroelectronics, N-Channel 650V 30A (Tc) 35W (Tc) Through Hole TO-220FP, MDmesh™ V
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PSMN1R8-30PL,127 Nexperia USA Inc., N-Channel 30V 100A (Tc) 270W (Tc) Through Hole TO-220AB,
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IXFP16N50P3 IXYS, N-Channel 500V 16A (Tc) 330W (Tc) Through Hole TO-220AB, HiPerFET™, Polar3™
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TK6A80E,S4X Toshiba Semiconductor and Storage, N-Channel 800V 6A (Ta) 45W (Tc) Through Hole TO-220SIS, π-MOSVIII
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