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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9640-100A
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 39mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 3072pF @ 25V
FET Feature -
Power Dissipation (Max) 158W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TK100L60W,VQ
Toshiba Semiconductor and Storage, N-Channel 600V 100A (Ta) 797W (Tc) Through Hole TO-3P(L), DTMOSIV
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NTD14N03RT4G
ON Semiconductor, N-Channel 25V 2.5A (Ta) 1.04W (Ta), 20.8W (Tc) Surface Mount DPAK,
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CSD19535KTT
Texas Instruments, N-Channel 100V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™
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SI4114DY-T1-E3
Vishay Siliconix, N-Channel 20V 20A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®
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SIHJ240N60E-T1-GE3
Vishay Siliconix, N-Channel 600V 12A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8,
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IRLH5030TRPBF
Infineon Technologies, N-Channel 100V 13A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®
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FQU1N60CTU
ON Semiconductor, N-Channel 600V 1A (Tc) 2.5W (Ta), 28W (Tc) Through Hole I-PAK, QFET®
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SIHA2N80E-GE3
Vishay Siliconix, N-Channel 800V 2.8A (Tc) 29W (Tc) Through Hole TO-220 Full Pack,
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PSMN3R0-30MLC,115
Nexperia USA Inc., N-Channel 30V 70A (Tc) 88W (Tc) Surface Mount LFPAK33,
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STD25NF20
STMicroelectronics, N-Channel 200V 18A (Tc) 110W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, STripFET™
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SIHP25N60EFL-GE3
Vishay Siliconix, N-Channel 600V 25A (Tc) 250W (Tc) Through Hole TO-220AB,
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FDP7030BL
ON Semiconductor, N-Channel 30V 60A (Ta) 60W (Tc) Through Hole TO-220-3, PowerTrench®
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